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PD - 95867A
HEXFET(R) Power MOSFET plus Schottky Diode
Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l l
IRF6691
Qg(typ.)
47nC
VDSS
20V
RDS(on) max
2.5m@VGS = 4.5V 1.8m@VGS = 10V
MT
DirectFET ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ SX ST MQ MX MT
Description
The IRF6691 combines IRs industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6691 is characterized with reduced on resistance (R DS(on)), reverse recovery charge (Q rr) and source to drain voltage (VSD ) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous MOSFET sockets operating in 12 volt buss converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C PD @TC = 25C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 12 180 32 26 260 2.8 1.8 89 0.022 -40 to + 150
Units
V
A
g Power Dissipation g
Power Dissipation Power Dissipation
c
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
fj gj Junction-to-Ambient hj Junction-to-Case ij
Junction-to-Ambient Junction-to-Ambient
Parameter
Typ.
--- 12.5 20 --- 1.0
Max.
45 --- --- 1.4 ---
Units
C/W
Junction-to-PCB Mounted
Notes through are on page 10
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11/3/04
IRF6691
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
20 --- --- --- 1.6 --- --- --- --- --- --- 110 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 12 1.8 1.2 --- -4.1 --- --- --- --- --- --- 47 14 4.4 15 14 19 30 0.60 23 95 25 10 6580 2070 840 --- --- 2.5 1.8 2.5 --- 1.4 500 5 100 -100 --- 71 --- --- --- --- --- --- 1.5 --- --- --- --- --- --- --- Typ. --- --- pF nC nC S V mA A mA nA V
Conditions
VGS = 0V, ID = 1.0mA
mV/C Reference to 25C, ID = 10mA m VGS = 4.5V, ID = 12A VGS = 10V, ID = 15A
e e
VDS = VGS, ID = 250A VDS = 20V, VGS = 0V VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V VDS = 10V, ID = 26A VDS = 10V VGS = 4.5V ID = 17A See Fig. 17 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5VAe
mV/C ID = 10mA, reference to 25C
ns
ID = 26A Clamped Inductive Load VGS = 0V VDS = 10V = 1.0MHz Max. 230 26 Units mJ A
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 32 26 32 A 260 0.65 48 39 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V TJ = 25C, IF = 25A di/dt = 100A/s
e
e
2
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IRF6691
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
2.7V 10
1
2.7V
60s PULSE WIDTH
0.1 0.1 1 Tj = 25C 1 100 0.1 1 10
60s PULSE WIDTH
Tj = 150C 10 100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.5
ID, Drain-to-Source Current ()
ID = 32A VGS = 10V
100
10
T J = 150C
1.0
T J = 25C 1 VDS = 10V 60s PULSE WIDTH 0.1 1 2 3 4 5
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF6691
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
6.0 ID= 17A
VGS, Gate-to-Source Voltage (V)
5.0 4.0 3.0 2.0 1.0 0.0
VDS= 16V VDS= 10V
C, Capacitance(pF)
10000
Ciss Coss
1000
Crss
100 1 10 100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100 T J = 150C T J = 25C 10
100
100sec
10 T A = 25C
1msec
1 0.0 0.2 0.4 0.6 0.8
VGS = 0V 1.0 1.2
Tj = 150C Single Pulse 1 0 1 10
10msec
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF6691
200
VGS(th) Gate threshold Voltage (V)
2.5
175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (C)
ID, Drain Current (A)
2.0
ID = 250A
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
100
10
Thermal Response ( Z thJA )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
0.1
Ri (C/W)
0.678 17.30 17.57 9.470
i (sec)
0.000860 0.577560 8.940000 106.0000
0.01
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.0001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF6691
RDS(on), Drain-to -Source On Resistance (m )
10
1000
EAS , Single Pulse Avalanche Energy (mJ)
9 8 7 6 5 4 3 2 1 0 2 3 4 5 6 7 T J = 25C
ID = 32A
800
ID TOP 12A 15A BOTTOM 26A
600
400
T J = 125C
200
0
8
9
10
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy vs. Drain Current
15V
LD VDS
VDS L
DRIVER
+
VDD -
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
0.01
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 14a. Switching Time Test Circuit
90%
VDS
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 13b. Unclamped Inductive Waveforms
Fig 14b. Switching Time Waveforms
6
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IRF6691
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id
Current Regulator Same Type as D.U.T.
Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Test Circuit
Fig 17. Gate Charge Waveform
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IRF6691
DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.82 E 0.78 0.92 F 0.88 1.82 G 1.78 H 0.98 1.02 0.67 J 0.63 K O.88 1.01 2.63 L 2.46 0.70 M 0.59 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.023 0.001 0.003 MAX 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.028 0.003 0.007
NOTE: CONTROLLING DIMENSIONS ARE IN MM
8
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IRF6691
DirectFET Board Footprint, MT Outline (Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
6 5 7
3 4
1
1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain
2
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6691). For 1000 parts on 7" reel, order IRF6691TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX CODE MIN MAX MIN MAX MAX A 12.992 6.9 N.C 330.0 N.C 177.77 N.C N.C B 0.795 0.75 20.2 N.C 19.06 N.C N.C N.C 0.504 0.53 C 12.8 13.5 0.50 0.520 12.8 13.2 D 0.059 0.059 N.C 1.5 N.C 1.5 N.C N.C E 3.937 2.31 100.0 58.72 N.C N.C N.C N.C F N.C N.C N.C 0.724 N.C 0.53 13.50 18.4 G 0.488 0.47 12.4 11.9 N.C 0.567 12.01 14.4 H 0.469 0.47 11.9 11.9 0.606 12.01 N.C 15.4
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9
IRF6691
DirectFET Part Marking
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 0.72mH, RG = 25, IAS = 26A. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in. square Cu board.
Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
R is measured at TJ of approximately 90C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/04
10
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